Simulation of a gamma-ray imaging technique using detector response patterns

Kitayama, Yoshiharu; Nogami, Mitsuhiro*; Hitomi, Keitaro*

Japanese Journal of Applied Physics, 63(3), p.032005_1 - 032005_6, 2024/03

https://doi.org/10.35848/1347-4065/ad2d7a

We introduce a novel gamma-ray imaging technique that uses detector response patterns. This method employs multiple shielding cubes randomly positioned in a three-dimensional configuration. Within the volume defined by these cubes, a unique gamma-ray flux pattern is formed based on the incidence direction of the gamma rays. This pattern can be measured using the responses of several scintillator cubes. By pre-measuring the detector response pattern and incidence direction of the gamma rays, the incidence direction can be estimated using an unfolding technique. Simulations were performed using a Cs point source. Our results show that a 10 MBq Cs source, located 3 m away from the imager, can be imaged with an angular resolution close to 10. These findings suggest that our new method is comparable to existing gamma-ray imaging techniques. Potential applications of this imaging method include nuclear power plant decommissioning, nuclear medicine, security, and astronomy.

Formation of high-quality SiO/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO

Onishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 62(5), p.050903_1 - 050903_4, 2023/05

https://doi.org/10.35848/1347-4065/acd1ca

While the formation of an GaO interlayer is key to achieving SiO/GaN interfaces with low defect density, it can affect the reliability and stability of metal-oxide-semiconductor (MOS) devices if the annealing conditions are not properly designed. In the present study, we aimed to minimize the growth of the GaO layer on the basis of the sputter deposition of SiO on GaN. Synchrotron radiation X-ray photoelectron spectrometry measurements confirmed the suppressed growth of the GaO layer compared with a SiO/GaN structure formed by plasma-enhanced chemical vapor deposition. Negligible GaO growth was also observed when subsequent oxygen annealing up to 600C was performed. A MOS device with negligible capacitance-voltage hysteresis, nearly ideal flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600C and 400C, respectively.

Implementation of the electron track-structure mode for silicon into PHITS for investigating the radiation effects in semiconductor devices

Hirata, Yuho; Kai, Takeshi; Ogawa, Tatsuhiko; Matsuya, Yusuke; Sato, Tatsuhiko

Japanese Journal of Applied Physics, 61(10), p.106004_1 - 106004_6, 2022/10

https://doi.org/10.35848/1347-4065/ac8ae9

Some radiation effects such as pulse-height defects and soft errors can cause problems in silicon (Si) devices. Local energy deposition in microscopic scales is essential information to elucidate the mechanism of these radiation effects. We, therefore, developed an electron track-structure model, which can simulate local energy deposition down to nano-scales, dedicated to Si and implemented it into PHITS. Then, we verified the accuracy of our developed model by comparing the ranges and depth-dose distributions of electrons obtained from this study with the corresponding experimental values and other simulated results. As an application of the model, we calculated the mean energies required to create an electron-hole pair, the so-called epsilon value. We found that the threshold energy for generating secondary electrons reproducing the epsilon value is 2.75 eV, consistent with the corresponding data deduced from past theoretical and computational studies. Since the magnitudes of the radiation effects on Si devices largely depend on the epsilon value, the developed code is expected to contribute to precisely understanding the mechanisms of pulse-height defects and semiconductor soft errors.

Precise magnetization measurements down to 500 mK using a miniature He cryostat and a closed-cycle He gas handling system installed in a SQUID magnetometer without continuous-cooling functionality

Shimamura, Kazutoshi*; Wajima, Hiroki*; Makino, Hayato*; Abe, Satoshi*; Haga, Yoshinori; Sato, Yoshiaki*; Kawae, Tatsuya*; Yoshida, Yasuo*

Japanese Journal of Applied Physics, 61(5), p.056502_1 - 056502_7, 2022/05

https://doi.org/10.35848/1347-4065/ac5bb0

High-spatial-resolution measurement of magnetization distribution using polarized neutron imaging

Sasada, Seiji*; Hiroi, Kosuke; Osanai, Kenta*; Shinohara, Takenao; Watanabe, K.*; Uritani, Akira*

Japanese Journal of Applied Physics, 60(12), p.126003_1 - 126003_6, 2021/12

https://doi.org/10.35848/1347-4065/ac3524

Autoradiography system with phosphor powder (ZnS:Ag) for imaging radioisotope dynamics in a living plant

Kurita, Keisuke; Sakai, Takuro; Suzui, Nobuo*; Yin, Y.-G.*; Sugita, Ryohei*; Kobayashi, Natsuko*; Tanoi, Keitaro*; Kawachi, Naoki*

Japanese Journal of Applied Physics, 60(11), p.116501_1 - 116501_4, 2021/11

https://doi.org/10.35848/1347-4065/ac2b50

Radioisotope tracer imaging is useful for studying plant physiological phenomena. In this study, we developed an autoradiography system with phosphor powder (ZnS:Ag), "Live-autoradiography", for imaging radioisotope dynamics in a living plant. This system visualizes the element migration and accumulation in intact plants continuously under a light environment. An imaging test was performed on point sources of Cs, with a radioactivity of 10-100 kBq of being observed; this indicates satisfactory system linearity between the image intensity and the radioactivity of Cs. Moreover, dynamics imaging of Cs was performed on an intact soybean plant for four days. The serial images indicated Cs accumulation in the node, vein, and growing point of the plant. The developed system can be used for studying plant physiological phenomena and can be employed for quantitative measurement of radionuclides.

Development of a method for positron annihilation lifetime measurement in thin polyethylene films using a Na-22 source

Yamawaki, Masato*; Uesugi, Naoya*; Oka, Toshitaka; Nagasawa, Naotsugu*; Ando, Hirokazu*; O'Rourke, B. E.*; Kobayashi, Yoshinori*

Japanese Journal of Applied Physics, 59(11), p.116504_1 - 116504_5, 2020/11

https://doi.org/10.35848/1347-4065/abc02e

Positron annihilation lifetime measurements were performed on polyethylene films with thickness of 15m - 2000m using a Na-22 positron source enclosed in a Kapton film. For thin films, some positrons will pass through the film and annihilate behind it. Using a single film in a commercial anti-coincidence system, by placing an annealed stainless steel (SUS304) cover behind the sample, it is possible to sufficiently measure the long lifetime ortho-positronium (o-Ps) component even in thin films. Additionally, calculated intensities of the o-Ps component determined from the estimated film transmittance agreed well with the measured values. Furthermore, by applying this method to uniaxially stretched UHMWPE, we were able to observe structural changes owing to the stretching consistent with shorter measured o-Ps lifetime and increased o-Ps intensity.

Roles of strain and carrier in silicon oxidation

Ogawa, Shuichi*; Yoshigoe, Akitaka; Tang, J.*; Sekihata, Yuki*; Takakuwa, Yuji*

Japanese Journal of Applied Physics, 59(SM), p.SM0801_1 - SM0801_42, 2020/07

https://doi.org/10.35848/1347-4065/ab82a9

In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO, thermal excitation of Si emission rate, and heat of adsorption.

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Okuno, Yasuki*; Ishikawa, Norito; Akiyoshi, Masafumi*; Ando, Hirokazu*; Harumoto, Masaki*; Imaizumi, Mitsuru*

Japanese Journal of Applied Physics, 59(7), p.074001_1 - 074001_7, 2020/07

https://doi.org/10.35848/1347-4065/ab9713

Performance degradation prediction for space solar cells under irradiation with low-energy electrons is greatly affected by displacement threshold energy (Ed) when a displacement damage dose (DDD) model is used. According to recent studies, the Ed of P atoms is much lower than the conventional Ed value in InP-type solar cells irradiated with low-energy electrons. This indicates that the value of Ed typically used in DDD model leads to significant error in performance degradation prediction. In this study, degradation of AlInGaP solar cells is observed after irradiation with 60 keV electrons. The results suggest that the Ed of P atoms in AlInGaP solar cells is much smaller than the conventionally used Ed value. By using the DDD model with the Ed value obtained in this study, we demonstrated that the performance degradation predicted by the DDD model agrees well with the experimental results.

Toward technological contributions to remote operations in the decommissioning of the Fukushima Daiichi Nuclear Power Station

Kawabata, Kuniaki

Japanese Journal of Applied Physics, 59(5), p.050501_1 - 050501_9, 2020/05

https://doi.org/10.35848/1347-4065/ab82ad

This paper describes the decommissioning work being undertaken at the Fukushima Daiichi Nuclear Power Station of the Tokyo Electric Power Company Holdings Inc.'s (FDNPS) using remote controlled robotic systems, as well as lessons learned from past remote task executions. We also summarize the issues to be considered in promoting safe, steady, and efficient decommissioning based on past experiences. In response to these issues, we are developing test methods for performance evaluation of the robots for nuclear decommissioning, robot simulator for operator proficiency training, and information generation methods to improve the operator's status awareness. The current status of technological development is also described.